onsemi FDD6N20TF
Obsolete
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-06-18
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2008-12-02
LTD Date2009-06-02
相关零件
InfineonIRFR220NPBF
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 600 Milliohms;ID 5A;D-Pak (TO-252AA);PD 43W
InfineonIRFR220NTRPBF
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 600 Milliohms;ID 5A;D-Pak (TO-252AA);PD 43W
InfineonIRFR220NTRLPBF
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 600 Milliohms;ID 5A;D-Pak (TO-252AA);PD 43W
描述
由其分销商提供的 onsemi FDD6N20TF 的描述。
Power Field-Effect Transistor, 4.5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET N-CH 200V 4.5A D-PAK
N-Channel 200V 4.5A (Tc) 40W (Tc) Surface Mount D-Pak
MOSFETs 200V N-CH MOSFET
N-CHANNEL POWER MOSFET
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)4.5 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance800 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time12.8 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance230 pF
Max Operating Temperature150 °C
Max Power Dissipation40 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation40 W
Rds On Max800 mΩ
Rise Time5.6 ns
Turn-Off Delay Time15 ns