备用零件
Price @ 1000
$ 0.468
Stock
45,748
569,864
Authorized Distributors
0
6
Mount
Surface Mount
Surface Mount
Case/Package
TO-252
TO-252-3
Drain to Source Voltage (Vdss)
800 V
800 V
Continuous Drain Current (ID)
2 A
2 A
Threshold Voltage
-
-
Rds On Max
2.7 Ω
2.7 Ω
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
42 W
42 W
Input Capacitance
290 pF
290 pF
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-08-10
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2016-11-15
LTD Date2017-05-15
相关零件
InfineonSPD08N50C3ATMA1
Trans MOSFET N-CH 500V 7.6A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 500V 7.6A DPAK
描述
由其分销商提供的 Infineon SPD02N80C3BTMA1 的描述。
Transistor MOSFET N-Channel 800V 2A 3-Pin DPAK T/R
2 A 800 V 2.7 ohm N-CHANNEL Si POWER MOSFET TO-252AA
Power Field-Effect Transistor, 2A I(D), 800V, 2.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageTO-252
Contact PlatingTin
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)2 A
Drain to Source Breakdown Voltage800 V
Drain to Source Resistance2.7 Ω
Drain to Source Voltage (Vdss)800 V
Fall Time18 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance290 pF
Max Dual Supply Voltage800 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation42 W
Min Breakdown Voltage800 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape and Reel
Power Dissipation42 W
Rds On Max2.7 Ω
Rise Time15 ns
Turn-Off Delay Time72 ns
Turn-On Delay Time25 ns
Dimensions
Height2.35 mm