High voltage, high speed power MOSFET and IGBT driver with three independent high side and low side referenced output channels for 3-phase applications in a 20-Lead SOIC
600 V Three Phase Driver IC with typical 0.2 A source and 0.35 A sink currents in 20 Lead SOICWB package for IGBTs and MOSFETs. Also available in 28 Lead MLPQ 5x5 | Summary of Features: Floating channel designed for bootstrap operation; Fully operational to +600 V; Tolerant to negative transient voltage, dV/dt immune; Gate drive supply range from 10 V to 20 V; Integrated dead time protection; Shoot-through (cross-conduction) prevention logic; Undervoltage lockout for both channels; Independent 3 half-bridge drivers; 3.3 V logic compatible; Advanced input filter; Matched propagation delay for both channels; Lower di/dt gate driver for better noise immunity; Outputs in phase with inputs