Infineon IRS2183SPBF

600 V half-bridge gate driver IC with shoot through protection, SOIC 8N, RoHS

Tube IRS2183SPBF Half-Bridge 1996 gate driver 60ns -40C~150C TJ 1.9A 2.3A 625mW

IRS2183 Series 1.9 A 20 V Supply Dual Output Half Bridge Driver - SOIC-8

Power MOSFET and IGBT Driver, 1/2 Bridge, 600V, 8-pin SOIC, Tube

Half Bridge Driver, SoftTurn-On, Low Side Inverting Input, Separate High and Low Side Input, 400ns Deadtime in a 8-Lead package

IGBT Gate Driver IC; Device Type:High-Side; No. of Outputs:2; Output Voltage:620V; Output Current:2.3A; Source Output Current Max:1400mA; Sink Output Current:1800mA; Power Dissipation, Pd:0.625W; Supply Voltage Min:10V ;RoHS Compliant: Yes

IC, HALF BRIDGE DRIVER, SMD, SOIC8; No. of Outputs:2; Output Current:1.9A; Output Voltage:620V; Supply Voltage Range:10V to 20V; Driver Case Style:SOIC; No. of Pins:8; Operating Temperature Range:-40°C to +125°C; SVHC:No SVHC (19-Dec-2011); Base Number:2183; Device Type:MOSFET; Operating Temperature Max:125°C; Operating Temperature Min:-40°C; Output Current Max:1.4A; Output Voltage Max:20V; Package / Case:SOIC; Supply Voltage Max:20V; Supply Voltage Min:10V; Termination Type:SMD

600 V Half Bridge Driver IC with typical 1.9 A source and 2.3 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 8 Lead PDIP, 14 Lead SOIC, and 14 Lead PDIP. | Summary of Features: Floating channel designed for bootstrap operation; Fully operational to +600 V; Tolerant to negative transient voltage, dV/dt immune; Gate drive supply range from 10 V to 20 V; Undervoltage lockout for both channels; 3.3 V and 5 V input logic compatible; Matched propagation delay for both channels; Logic and power ground +/- 5 V offset; Lower di/dt gate driver for better noise immunity; Output source/sink current capability 1.4 A/1.8 A