Infineon IRS2181SPBF

Tube IRS2181SPBF Half-Bridge 1996 gate driver 60ns -40C~150C TJ 1.9A 2.3A 625mW

Power MOSFET and IGBT Driver, Hi/Lo Side, 600V, 8-pin SOIC, T/R - Tape and Reel

600 V high-side and low-side gate driver IC, SOIC 8N, RoHS

IRS2181 Series Dual 20 V 2.3 A Surface Mount High and Low Side Driver - SOIC-8

Gate Drivers The factory is currently not accepting orders for this product

MOSFET Driver IC; Device Type:High and Low Side; Supply Voltage Max:20V; Package/Case:8-SOIC; No. of Pins:8; Operating Temperature Range:-40°C to +125°C; Delay Matching:35ns; Fall Time, tf:20ns ;RoHS Compliant: Yes

IC, DRIVER, HIGH/LOW SIDE, SOIC8; Device Type:MOSFET; Module Configuration:High Side / Low Side; Peak Output Current:2.3A; Input Delay:180ns; Output Delay:220ns; Supply Voltage Range:10V to 20V; Driver Case Style:SOIC; No. of Pins:8; Operating Temperature Range:-40°C to +125°C; SVHC:No SVHC (19-Dec-2011); Base Number:2181; No. of Outputs:2; Operating Temperature Max:125°C; Operating Temperature Min:-40°C; Output Current:1.9A; Output Current + Max:1.8A; Output Sink Current Min:1800mA; Output Source Current Min:1400mA; Output Voltage:620V; Output Voltage Max:20V; Package / Case:SOIC; Power Dissipation Pd:0.625W; Supply Voltage Max:20V; Supply Voltage Min:10V; Termination Type:SMD

600 V High and Low Side Driver IC with typical 1.9 A source and 2.3 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 8 Lead PDIP, 14 Lead SOIC, 14 Lead PDIP, and 14 Lead MLPQ 4X4. | Summary of Features: Floating channel designed for bootstrap operation; Fully operational to +600 V; Tolerant to negative transient voltage, dV/dt immune; Gate drive supply range from 10 V to 20 V; Undervoltage lockout for both channels; 3.3 V and 5 V input logic compatible; Matched propagation delay for both channels; Logic and power ground +/- 5 V offset; Lower di/dt gate driver for better noise immunity; Output source/sink current capability 1.4 A/1.8 A