Infineon IRS2101STRPBF

Name: Infineon IRS2101STRPBF
Brand: Infineon
SKU: IRS2101STRPBF

600 V high-side and low-side gate driver IC, SOIC 8N, RoHS

$ 0.547

Production

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor		SKU		Min	Pkg
DigiKey	3	IRS2101STRPBFCT-ND	9,101	1	Cut Tape	1.100	0.793	0.632	0.554	0.554
Newark		IRS2101STRPBF	1,666	1	Cut Tape	1.100	0.793	0.631	0.547	0.547
Future Electronics		IRS2101STRPBF	2,500	2500	Tape & Reel					0.455
Arrow Electronics	2	IRS2101STRPBF	2,488	1		1.011	0.755	0.598	0.478	0.478
Rochester Electronics		IRS2101STRPBF	714					0.614	0.510	0.455	7h

数据表和文档

下载 Infineon IRS2101STRPBF 的数据表和制造商文档。

IHS

Datasheet15 页20 年前

SHENGYU ELECTRONICS

iiiC

库存历史记录

3 个月趋势:

-23.48%

CAD 模型

从我们值得信赖的合作伙伴处下载 Infineon IRS2101STRPBF 符号、封装和 3D STEP 模型。

来源	eCAD	mCAD	文件
Component Search Engine	符号封装	3D	下载

下载 CAD 模型时，合作伙伴网站将在新标签页中打开

从 Octopart 下载 CAD 模型，即表示您同意我们的条款和条件以及隐私政策。

备用零件

此零件

备用零件

InfineonIRS2101STRPBF

InfineonIRS2101SPBF

Price @ 1000

$ 0.547

$ 0.986

Stock

709,603

348,241

Authorized Distributors

Case/Package

SOP

Number of Pins

Channel Type

Independent

Number of Drivers

Max Output Current

600 mA

Rise Time

70 ns

Fall Time

35 ns

Min Supply Voltage

10 V

Max Supply Voltage

20 V

Max Power Dissipation

625 mW

供应链

Lifecycle StatusProduction (Last Updated: 2 months ago)

描述

由其分销商提供的 Infineon IRS2101STRPBF 的描述。

600 V high-side and low-side gate driver IC, SOIC 8N, RoHS

Infineon SCT

Power MOSFET and IGBT Driver, High Voltage, High Speed, 600V, 8-pin PDIP, T/R

Avnet Japan

IRS2101 Series 600 V 290 mA 20 V Supply Dual High And Low Side Driver - SOIC-8

Future Electronics

Gate Drivers The factory is currently not accepting orders for this product

Digi-ic_SMART PIONEER

Gate Drivers; INFINEON; IRS2101STRPBF; 1; 10 V - 20 V; 8; Surface Mount

Maritex

EiceDRIVER™ 600 V high and low side gate driver IC with typical 0.29 A source and 0.6 A sink currents in 8 Lead SOIC package IGBTs and MOSFETs. Also available in 8 Lead PDIP.

Infineon

MOSFET/IGBT DRIVER, HIGH/LOW SIDE, SOIC; Driver Configuration: High Side and Low Side; Peak Output Current: 270mA; Supply Voltage Min: 10V; Supply Voltage Max: 20V; Driver Case Style: SOIC; No. of Pins: 8Pins; Input Delay: 160ns; Output Delay: 150ns; Operating Temperature Min: -40°C; Operating Temperature Max: 125°C; Product Range: -; Automotive Qualification Standard: -; RoHS Phthalates Compliant: Yes; MSL: MSL 2 - 1 year; SVHC: No SVHC (27-Jun-2018)

Farnell

IGBT Gate Driver IC; Device Type:High and Low Side; No. of Outputs:2; Output Voltage:620V; Output Current:600mA; Source Output Current Max:100mA; Sink Output Current:210mA; Power Dissipation, Pd:0.625W; Supply Voltage Min:10V ;RoHS Compliant: Yes

Newark