Infineon IRLU024NPBF

Name: Infineon IRLU024NPBF
Brand: Infineon
SKU: IRLU024NPBF

Mosfet, Power; N-ch; Vdss 55V; Rds(on) 0.065 Ohm; Id 17A; I-pak (TO-251AA); Pd 45W

$ 0.371

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价格与库存

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Distributor		SKU		Min	Pkg
Avnet	2	63J7671	908	1		1.270	0.556	0.496	0.343	0.338	2d
Newark		IRLU024NPBF	5,006	1		1.270	0.556	0.496	0.343	0.338
Arrow Electronics	2	IRLU024NPBF	45,605	1		1.478	0.649	0.579	0.400	0.388
Future Electronics	2	IRLU024NPBF	163,324	50	Tube			0.380	0.360	0.340
Rochester Electronics	2	IRLU024NPBF	3,000					0.447	0.371	0.331	23h

数据表和文档

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ODG (Origin Data Global)

Datasheet11 页21 年前

IHS

Newark

RS (Formerly Allied Electronics)

iiiC

库存历史记录

3 个月趋势:

+13.04%

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1996-02-01

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 Infineon IRLU024NPBF 的描述。

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.065Ohm;ID 17A;I-Pak (TO-251AA);PD 45W

RS (Formerly Allied Electronics)

Power MOSFET, N Channel, 55 V, 17 A, 0.065 ohm, TO-251AA, Through Hole

Avnet

55V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS

Infineon SCT

Transistor MOSFET N-Ch. 60V 14A TO251 IRLU 024 NPBF

Rapid Electronics

HEXFET Power MOSFET Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

ComSIT Distribution GmbH

MOSFET, N, 55V, 17A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:55V; On Resistance Rds(on):65mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:46W; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:17A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:3.3°C/W; No. of Transistors:1; On State resistance @ Vgs = 10V:65mohm; Package / Case:IPAK; Power Dissipation Pd:46W; Power Dissipation Pd:46W; Pulse Current Idm:72A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V

element14 APAC

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon