Infineon IRLS3034PBF

Name: Infineon IRLS3034PBF
Brand: Infineon
SKU: IRLS3034PBF

Single N-Channel 40 V 1.7 mOhm 108 nC HEXFET® Power Mosfet - D2PAK

$ 6.52

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRLS3034PBF	0	2	Bulk		6.820	6.520	6.520	6.520	3h
Farnell	IRLS3034PBF	0	1		2.085*	2.071*	2.058*	2.018*	2.018*	14h
Win Source	WS-IRLS3034PBF	184	10			6.257	4.172	4.172	4.172	15h
Worldway Electronics	IRLS3034PBF	16,323	7	Tube		2.257	2.188	2.073	2.073	14h
GreenTree Electronics	IRLS3034PBF	450								6h

数据表和文档

下载 Infineon IRLS3034PBF 的数据表和制造商文档。

IHS

Datasheet11 页16 年前

Datasheet10 页16 年前

iiiC

CAD 模型

从我们值得信赖的合作伙伴处下载 Infineon IRLS3034PBF 符号、封装和 3D STEP 模型。

来源	eCAD	mCAD	文件
EE Concierge	符号封装

下载 CAD 模型时，合作伙伴网站将在新标签页中打开

从 Octopart 下载 CAD 模型，即表示您同意我们的条款和条件以及隐私政策。

备用零件

此零件

备用零件

InfineonIRLS3034PBF

InfineonIRLS3034TRLPBF

Price @ 1000

$ 6.52

$ 1.354

Stock

140,405

185,311

Authorized Distributors

Mount

Surface Mount

Case/Package

D2PAK

Drain to Source Voltage (Vdss)

40 V

Continuous Drain Current (ID)

195 A

Threshold Voltage

2.5 V

Rds On Max

1.7 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

375 W

195 W

Input Capacitance

10.315 nF

供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2009-01-14

Lifecycle StatusObsolete (Last Updated: 4 months ago)

描述

由其分销商提供的 Infineon IRLS3034PBF 的描述。

Single N-Channel 40 V 1.7 mOhm 108 nC HEXFET® Power Mosfet - D2PAK

Future Electronics

40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

Infineon SCT

Trans MOSFET N-CH 40V 343A 3-Pin(2+Tab) D2PAK Tube

Verical

Power Field-Effect Transistor, 195A I(D), 40V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

IHS

MOSFET, N-CH 40V 195A D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:195A; Drain Source Voltage Vds:40V; On Resistance Rds(on):1.7mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:375W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:343A; Package / Case:D2-PAK; Power Dissipation Pd:375W; Power Dissipation Pd:375W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:40V; Voltage Vgs Max:2.5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V

element14 APAC

Benefits: Optimized for Logic Level Drive; Very Low RDS(ON) at 4.5V VGS; Superior R*Q at 4.5V VGS; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability; Lead-Free | Target Applications: Battery Operated Drive

Infineon