Infineon IRLR8729PBF

Name: Infineon IRLR8729PBF
Brand: Infineon
SKU: IRLR8729PBF

30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

$ 0.435

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor	SKU		Min	Pkg
Rochester Electronics	IRLR8729PBF	419					0.524	0.435	0.388	9h
RS (Formerly Allied Electronics)	IRLR8729PBF	0	1125	Bulk					1.500	2h
Farnell	IRLR8729PBF	0	1		0.532*	0.532*	0.409*	0.354*	0.354*	9h
Win Source	WS-IRLR8729PBF	12,300	175					0.259	0.224	10h
Worldway Electronics	IRLR8729PBF	14,299	7	Tube		0.134	0.130	0.123	0.123	1d

数据表和文档

下载 Infineon IRLR8729PBF 的数据表和制造商文档。

IHS

Datasheet12 页16 年前

Datasheet11 页16 年前

Newark

iiiC

库存历史记录

3 个月趋势:

Restocked

供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2008-12-16

Lifecycle StatusObsolete (Last Updated: 4 months ago)

描述

由其分销商提供的 Infineon IRLR8729PBF 的描述。

30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 50A I(D), 30V, 0.0089ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

IHS

Benefits: Very Low RDS(on) at 4.5V VGS; Ultra-Low Gate Impedance; Fully Characterized Avalanche Voltage and Current; Lead-Free; RoHS compliant

Infineon

MOSFET, N-CH 30V 58A DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:30V; On Resistance Rds(on):8.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:55W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Current Id Max:58A; Package / Case:D-PAK; Power Dissipation Pd:55W; Power Dissipation Pd:55W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V

element14 APAC