Infineon IRLR8259TRPBF

Name: Infineon IRLR8259TRPBF
Brand: Infineon
SKU: IRLR8259TRPBF

IRLR8259 Series 25 V 8.7 mOhm 6.8 nC Surface Mount HEXFET Power MOSFET - DPAK-3

$ 1.93

Obsolete

制造商页面数据表

价格与库存

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未经授权的库存分销商

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Distributor		SKU		Min	Pkg
RS (Formerly Allied Electronics)		IRLR8259TRPBF	0	20	Bulk			2.030	1.930	1.930	6h
Farnell	2	IRLR8259TRPBF	0	1	Cut Tape	1.248*	1.248*	1.248*	1.248*	1.248*	1h
Microchip USA		IRLR8259TRPBF	2,051	3K	Tray					0.928	2d
Weyland Electronics Group Pte. Ltd.		IRLR8259TRPBF	800	1	Tape & Reel	3.830	3.830	3.830	3.830	3.830	2d
Win Source		WS-IRLR8259TRPBF	16,280	28				1.647	1.412	1.412	15h

数据表和文档

下载 Infineon IRLR8259TRPBF 的数据表和制造商文档。

IHS

Datasheet11 页17 年前

Datasheet0 页0 年前

iiiC

库存历史记录

3 个月趋势:

-100%

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InfineonIRLR8259TRPBF

InfineonIRLR8259PBF

Price @ 1000

$ 1.93

$ 0.337

Stock

456,432

402,124

Authorized Distributors

Mount

Surface Mount

Case/Package

DPAK

Drain to Source Voltage (Vdss)

25 V

Continuous Drain Current (ID)

42 A

Threshold Voltage

1.9 V

Rds On Max

8.7 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

48 W

Input Capacitance

900 pF

供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2008-12-16

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2024-09-30

LTD Date2025-03-31

描述

由其分销商提供的 Infineon IRLR8259TRPBF 的描述。

IRLR8259 Series 25 V 8.7 mOhm 6.8 nC Surface Mount HEXFET Power MOSFET - DPAK-3

Future Electronics

Trans MOSFET N-CH 25V 57A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 25V 57A DPAK

Win Source

25V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

Infineon SCT

HEXFET Power MOSFET Power Field-Effect Transistor, 42A I(D), 25V, 0.0087ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

ComSIT Distribution GmbH

MOSFET, N-CH, 25V, 57A, TO-252AA; Transistor Polarity:N Channel; Continuous Drain Current Id:57A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0063ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.9V; P

element14 APAC

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon