Infineon IRLMS6702TRPBF

Name: Infineon IRLMS6702TRPBF
Brand: Infineon
SKU: IRLMS6702TRPBF

-20V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package, TSOP6L, RoHS

$ 0.248

Obsolete

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRLMS6702TRPBF	0	50	Bulk			0.280	0.248	0.248	19h
Component Stockers USA	IRLMS6702TRPBF	3,076			0.300	0.300	0.300	0.300	0.300	>1wk
Win Source	WS-IRLMS6702TRPBF	91	345					0.120	0.097	8h
Worldway Electronics	IRLMS6702TRPBF	14,612	7	Tape & Reel		0.263	0.258	0.248	0.243	7h
ICPartonline	IRLMS6702TRPBF	38,874			0.219	0.208	0.197	0.187	0.176	>1wk

数据表和文档

下载 Infineon IRLMS6702TRPBF 的数据表和制造商文档。

Newark

Datasheet8 页21 年前

IHS

element14 APAC

RS (Formerly Allied Electronics)

Jameco

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.21.00.95

Introduction Date1996-03-21

Lifecycle StatusObsolete (Last Updated: 5 months ago)

LTB Date2022-10-15

LTD Date2023-04-15

描述

由其分销商提供的 Infineon IRLMS6702TRPBF 的描述。

-20V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package, TSOP6L, RoHS

Infineon SCT

MOSFET, Power;P-Ch;VDSS -20V;RDS(ON) 0.2Ohm;ID -2.4A;Micro6;PD 1.7W;VGS +/-12V

RS (Formerly Allied Electronics)

IRLMS6702TRPBF,MOSFET, P-CHANN EL, -20V, -2.3A, 200 MOHM, 5.

Jameco

Single P-Channel 20 V 0.375 Ohm 8.8 nC HEXFET® Power Mosfet - MICRO-6

Future Electronics

HEXFET POWER MOSFET Power Field-Effect Transistor, 2.4A I(D), 20V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

ComSIT Distribution GmbH

Transistor Polarity:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:2.4A; On Resistance Rds(On):0.2Ohm; Transistor Mounting:Surface Mount; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:700Mv Rohs Compliant: Yes |Infineon IRLMS6702TRPBF.

Newark

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon

MOSFET, P, LOGIC, TSOP-6; Transistor Polarity:P Channel; Continuous Drain Current Id:2.4A; Drain Source Voltage Vds:20V; On Resistance Rds(on):200mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-700mV; Power Dissipation Pd:1.7W; Transistor Case Style:TSOP; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Current Id Max:-2.4A; Current Temperature:25°C; Full Power Rating Temperature:25°C; On State Resistance @ Vgs = 4.5V:200mohm; P Channel Gate Charge:5.8nC; Package / Case:TSOP; Power Dissipation Pd:1.7W; Power Dissipation Pd:1.7W; Pulse Current Idm:13A; SMD Marking:2C; Termination Type:SMD; Voltage Vds:-20V; Voltage Vds Typ:-20V; Voltage Vgs Max:-700mV; Voltage Vgs Rds on Measurement:-4.5V; Voltage Vgs th Min:700mV

element14 APAC