价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | IRLML6401GTRPBF | 27,000 | 3h | |||||||||
| RS (Formerly Allied Electronics) | IRLML6401GTRPBF | 0 | 6K | Bulk | 20h | |||||||
| Verical | IRLML6401GTRPBF | 27,000 | 6834 | |||||||||
| Win Source | WS-IRLML6401GTRPBF | 189,330 | 215 | 4h | ||||||||
| Worldway Electronics | IRLML6401GTRPBF | 13,802 | 7 | Tape & Reel | 3h |
备用零件
Price @ 1000
$ 0.044
$ 0.141
Stock
293,399
30,351,439
Authorized Distributors
2
6
Mount
Surface Mount
Surface Mount
Case/Package
TO-236-3
SOT-23
Drain to Source Voltage (Vdss)
-12 V
-12 V
Continuous Drain Current (ID)
4.3 A
4.3 A
Threshold Voltage
-550 mV
-550 mV
Rds On Max
50 mΩ
50 mΩ
Gate to Source Voltage (Vgs)
8 V
8 V
Power Dissipation
1.3 W
1.3 W
Input Capacitance
830 pF
830 pF
供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2008-07-22
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2019-10-15
LTD Date2020-04-15
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描述
由其分销商提供的 Infineon IRLML6401GTRPBF 的描述。
-12V Single P-Channel Lead Free HEXFET Power MOSFET in a Halogen Free Micro3 package
Single P-Channel 12 V 1.3 W 15 nC Power Mosfet Surface Mount - MICRO-3
Power Field-Effect Transistor, 4.3A I(D), 12V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageTO-236-3
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)4.3 A
Drain to Source Breakdown Voltage-12 V
Drain to Source Resistance50 mΩ
Drain to Source Voltage (Vdss)-12 V
Element ConfigurationSingle
Fall Time210 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance830 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.3 W
Min Breakdown Voltage12 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance50 mΩ
Package Quantity3000
PackagingTape & Reel
Power Dissipation1.3 W
Rds On Max50 mΩ
Resistance50 mΩ
Rise Time32 ns
Threshold Voltage-550 mV
Turn-Off Delay Time250 ns
Turn-On Delay Time11 ns
Dimensions
Height1.1 mm
Length3.0226 mm
Width1.397 mm