Infineon IRLML6302TRPBF

Name: Infineon IRLML6302TRPBF
Brand: Infineon
SKU: IRLML6302TRPBF

Mosfet, Power; P-ch; Vdss -20V; Rds(on) 0.6 Ohm; Id -0.78A; MICRO3; Pd 540MW; Vgs +/-12V

$ 0.085

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor		SKU		Min	Pkg
Arrow Electronics		IRLML6302TRPBF	480	1		0.547	0.332	0.085	0.085	0.085
Future Electronics		IRLML6302TRPBF	0	3K	Tape & Reel					0.095
RS (Formerly Allied Electronics)		IRLML6302TRPBF	0	6K	Bulk					0.230	7h
Farnell	4	IRLML6302TRPBF	0	1	Custom Reel	255.47*	247.75*	247.75*	247.75*	247.75*	6h
Verical		IRLML6302TRPBF	480	17				0.085	0.085	0.085

数据表和文档

下载 Infineon IRLML6302TRPBF 的数据表和制造商文档。

IHS

Datasheet10 页12 年前

Datasheet9 页12 年前

Datasheet8 页14 年前

Newark

TME

RS (Formerly Allied Electronics)

Jameco

库存历史记录

3 个月趋势:

-22.51%

CAD 模型

从我们值得信赖的合作伙伴处下载 Infineon IRLML6302TRPBF 符号、封装和 3D STEP 模型。

来源	eCAD	mCAD	文件
Component Search Engine	符号封装	3D	下载
Ultra Librarian	符号封装		下载

下载 CAD 模型时，合作伙伴网站将在新标签页中打开

从 Octopart 下载 CAD 模型，即表示您同意我们的条款和条件以及隐私政策。

备用零件

此零件

备用零件

InfineonIRLML6302TRPBF

InfineonIRLML6302GTRPBF

Price @ 1000

$ 0.085

$ 0.099

Stock

13,393,672

244,644

Authorized Distributors

Mount

Surface Mount

Case/Package

SOT-23

TO-236-3

Drain to Source Voltage (Vdss)

-20 V

Continuous Drain Current (ID)

540 mA

780 mA

Threshold Voltage

-1.5 V

Rds On Max

600 mΩ

Gate to Source Voltage (Vgs)

12 V

Power Dissipation

540 mW

Input Capacitance

97 pF

供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.21.00.95

Introduction Date1995-07-01

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2024-07-31

LTD Date2025-01-31

描述

由其分销商提供的 Infineon IRLML6302TRPBF 的描述。

MOSFET, Power;P-Ch;VDSS -20V;RDS(ON) 0.6Ohm;ID -0.78A;Micro3;PD 540mW;VGS +/-12V

RS (Formerly Allied Electronics)

Power MOSFET, P Channel, 20 V, 780 mA, 600 Milliohms, SOT-23, 3 Pins, Surface Mount

Avnet

-20V Single P-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS

Infineon SCT

HEXFET POWER MOSFET Small Signal Field-Effect Transistor, 0.78A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

ComSIT Distribution GmbH

MOSFET, P, MICRO3; Transistor Polarity:P Channel; Continuous Drain Current Id:-610mA; Drain Source Voltage Vds:-20V; On Resistance Rds(on):600mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-1.5V; Power Dissipation Pd:540mW; Transistor Case Style:µSOIC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:-780mA; Package / Case:Micro3; Power Dissipation Pd:540mW; Termination Type:SMD; Voltage Vds Typ:-20V; Voltage Vgs Max:-1.5V; Voltage Vgs Rds on Measurement:-4.5V

element14 APAC

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon

Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) mA = -780 / Drain-Source Voltage (Vds) V = -20 / ON Resistance (Rds(on)) mOhm = 600 / Gate-Source Voltage V = 12 / Fall Time ns = 22 / Rise Time ns = 18 / Turn-OFF Delay Time ns = 22 / Turn-ON Delay Time ns = 13 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) mW = 540

Distrelec