Infineon IRLML6302PBF

Power MOSFET, P Channel, 20 V, 780 mA, 600 Milliohms, SOT-23, 3 Pins, Surface Mount
Obsolete
制造商页面数据表

价格与库存

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DistributorSKUMinPkg
Worldway ElectronicsIRLML6302PBF15,8707
2h
Classic Components
2
IRLML6302PBF80,000
3d
AztechIRLML6302PBF573
23h
Abacus TechnologiesIRLML6302PBF0
1d
Chip 1 ExchangeIRLML6302PBF联系方式
1d

数据表和文档

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Newark

Datasheet9 页12 年前

IHS

TME

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备用零件

此零件
备用零件
InfineonIRLML6302PBF
InfineonIRLML6302GTRPBF
Price @ 1000
$ 0.099
Stock
97,463
238,714
Authorized Distributors
0
3
Mount
Surface Mount
Surface Mount
Case/Package
SOT-23-3
TO-236-3
Drain to Source Voltage (Vdss)
-20 V
-20 V
Continuous Drain Current (ID)
780 mA
780 mA
Threshold Voltage
-1.5 V
-
Rds On Max
-
600 mΩ
Gate to Source Voltage (Vgs)
12 V
12 V
Power Dissipation
540 mW
540 mW
Input Capacitance
97 pF
97 pF

供应链

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date2004-01-22
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2024-07-31
LTD Date2025-01-31

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描述

由其分销商提供的 Infineon IRLML6302PBF 的描述。

Power MOSFET, P Channel, 20 V, 780 mA, 600 Milliohms, SOT-23, 3 Pins, Surface Mount
Avnet
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: P Power dissipation: 540 mW
Distrelec
Small Signal Field-Effect Transistor, 0.78A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3
SHENGYU ELECTRONICS
MOSFET, P, LOGIC, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:600mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):600mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-1.5V; Power Dissipation Pd:400mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:-780mA; Current Temperature:25°C; Device Marking:IRLML6302; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOT-23; Power Dissipation Pd:400mW; Power Dissipation Pd:400mW; Pulse Current Idm:34A; SMD Marking:1C; Tape Width:8mm; Termination Type:SMD; Voltage Vds Typ:-20V; Voltage Vgs Max:-12V; Voltage Vgs Rds on Measurement:-4.5V; Voltage Vgs th Max:-1.4V
element14 APAC

图片

RS
Farnell
reichelt
Farnell
TME
Distrelec
Newark
TME

制造商别名

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  • NFINEON
  • INFINEON/Infineon
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