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InfineonIRLL2705PBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.04Ohm;ID 3.8A;SOT-223;PD 1W;VGS +/-16V;-55
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Transistor: N-MOSFET; unipolar; 55V; 4.4A; 0.065ohm; 2.1W; -55+150 deg.C; SMD; SOT223
InfineonIRLL024NTRPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.065Ohm;ID 4.4A;SOT-223;PD 2.1W;VGS +/-16V
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MOSFET, P CH, W/DIO, 60V, 3A, SOT223; Transistor Polarity:P Channel; Continuous
描述
由其分销商提供的 Infineon IRLL2705TRPBF 的描述。
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.04Ohm;ID 3.8A;SOT-223;PD 1W;VGS +/-16V;-55
Power MOSFET, N Channel, 55 V, 5.2 A, 40 Milliohms, SOT-223 (TO-261AA), 4 Pins, Surface Mount
55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package, SOT223-4, RoHS
Infineon SCT
Single N-Channel 55 V 0.065 Ohm 48 nC HEXFET® Power Mosfet - SOT-223
IRLL2705TRPBF,MOSFET, 55V, 3.8 A, 40 MOHM, 32 NC QG, LOGIC L
HEXFET Power MOSFET Small Signal Field-Effect Transistor
Trans MOSFET N-CH 55V 5.2A 4-Pin(3+Tab) SOT-223 T/R Pb free
Avnet Japan
Power Field-Effect Transistor, 3.8A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
Channel Type:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:3.8A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Power Dissipation:1W; No. Of Pins:3Pins Rohs Compliant: Yes |Infineon Technologies IRLL2705TRPBF.
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 3.8 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 40 / Gate-Source Voltage V = 16 / Fall Time ns = 22 / Rise Time ns = 12 / Turn-OFF Delay Time ns = 35 / Turn-ON Delay Time ns = 6.2 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.1
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageSOT-223
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)3.8 A
Current Rating3.8 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance51 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time22 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance870 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.1 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Channels1
Number of Elements1
On-State Resistance40 mΩ
Package Quantity2500
PackagingTape & Reel
Power Dissipation2.1 W
Rds On Max40 mΩ
Resistance51 mΩ
Rise Time12 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time35 ns
Turn-On Delay Time6.2 ns
Voltage Rating (DC)55 V
Dimensions
Height1.8 mm
Length6.6802 mm
Width3.7 mm