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描述
由其分销商提供的 Infineon IRLH5030TR2PBF 的描述。
100V Single N-Channel HEXFET Power MOSFET in a PQFN 5mm x 6mm package
MOSFET, 100V, 100A, 9.0 mOhm max, 44 nC Qg, PQFN, Logic Level
Trans MOSFET N-CH 100V 13A 8-Pin PQFN EP T/R
HEXFET POWER MOSFET Power Field-Effect Transistor, 13A I(D), 100V, 0.0099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET,N CH,30V,13A,PQFN56; Transistor Polarity:N Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:100V; On Resistance Rds(on):7.2mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:250W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:13A; Power Dissipation Pd:250W; Voltage Vgs Max:20V
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Technical
Continuous Drain Current (ID)13 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance9.9 mΩ
Drain to Source Voltage (Vdss)100 V
Fall Time41 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance5.185 nF
Max Operating Temperature150 °C
Max Power Dissipation250 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs2.5 V
Number of Elements1
Rds On Max9 mΩ
Recovery Time48 ns
Rise Time72 ns
Threshold Voltage2.5 V
Turn-Off Delay Time41 ns
Turn-On Delay Time21 ns
Dimensions
Height990.6 µm
Length6.1468 mm
Width5.15 mm