供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-07-25
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2012-09-19
LTD Date2013-03-19
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描述
由其分销商提供的 Infineon IRL7833LPBF 的描述。
30V Single N-Channel HEXFET Power MOSFET in a TO-262 package
MOSFET, 30V, 150A, 3.8 MOHM, 32 NC QG, LOGIC LEVEL, TO-262
Compliant Through Hole 6.9 ns Lead Free Bulk 50 ns 3.8 mΩ TO-262
Power Field-Effect Transistor, 75A I(D), 30V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:150A; On Resistance, Rds(on):3.8mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-262 ;RoHS Compliant: Yes
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageTO-262
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)75 A
Current Rating150 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance3.8 mΩ
Drain to Source Voltage (Vdss)30 V
Fall Time6.9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.17 nF
Max Operating Temperature175 °C
Max Power Dissipation140 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
Power Dissipation140 W
Rds On Max3.8 mΩ
Rise Time50 ns
Turn-Off Delay Time21 ns
Turn-On Delay Time18 ns
Voltage Rating (DC)30 V