Infineon IRL40B215

Name: Infineon IRL40B215
Brand: Infineon
SKU: IRL40B215

40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

$ 1.17

Obsolete

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价格与库存

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Distributor		SKU		Min	Pkg
Rochester Electronics	2	IRL40B215	13,025					1.410	1.170	1.040	12h
Farnell		IRL40B215	0	1		2.822*	2.563*	2.141*	2.141*	2.141*	11h
Microchip USA		IRL40B215	235	600	Bulk				1.408	1.408	6h
Verical	3	IRL40B215	1,000	213					1.463	1.300
Win Source		WS-IRL40B215	4,950	55				1.125	0.750	0.750	13h

数据表和文档

下载 Infineon IRL40B215 的数据表和制造商文档。

Farnell

Datasheet11 页11 年前

element14 APAC

TME

库存历史记录

3 个月趋势:

-4.33%

CAD 模型

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SnapEDA	封装	3D	下载

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2015-04-27

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2022-09-30

LTD Date2023-03-31

描述

由其分销商提供的 Infineon IRL40B215 的描述。

40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

Single N-Channel 40 V 2.7 mOhm 56 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

MOSFET, 40V, 120A, 2.7 MOHM, 56 NC QG, LOGIC LEVEL, TO220

Avnet

Trans MOSFET N-CH Si 40V 164A 3-Pin(3+Tab) TO-220AB Tube

Verical

Power Field-Effect Transistor, 120A I(D), 40V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

MOSFET, N-CH, 40V, 120A, TO-220AB-3; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0022ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.4

element14 APAC

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon