Infineon IRL40B212

Name: Infineon IRL40B212
Brand: Infineon
SKU: IRL40B212

MOSFET N-CH 40V 195A TO220AB / N-Channel 40 V 195A (Tc) 231W (Tc) Through Hole TO-220AB

$ 1.1

Obsolete

制造商页面数据表

价格与库存

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未经授权的库存分销商

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Distributor		SKU		Min
Rochester Electronics		IRL40B212	20,000				1.230	1.100	1.030	5h
Farnell		IRL40B212	0	1	4.045*	3.242*	3.242*	3.242*	3.242*	5h
Verical	2	IRL40B212	11,000	244				1.375	1.288
Component Stockers USA		IRL40B212	14,735		1.360	1.330	1.290	1.250	1.250	2d
Win Source		WS-IRL40B212	9,980	10		5.455	3.636	3.636	3.636	6h

数据表和文档

下载 Infineon IRL40B212 的数据表和制造商文档。

Farnell

Datasheet13 页11 年前

element14 APAC

TME

库存历史记录

3 个月趋势:

-0.00%

CAD 模型

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Lifecycle StatusObsolete (Last Updated: 4 months ago)

描述

由其分销商提供的 Infineon IRL40B212 的描述。

MOSFET N-CH 40V 195A TO220AB / N-Channel 40 V 195A (Tc) 231W (Tc) Through Hole TO-220AB

Win Source

40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

Single N-Channel 40 V 1.9 mOhm 91 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

Trans MOSFET N-CH Si 40V 254A 3-Pin(3+Tab) TO-220AB Tube

Verical

MOSFET, 40V, 195A, 1.9 MOHM, 91 NC QG, LOGIC LEVEL, TO220

Avnet

Power Field-Effect Transistor, 254A I(D), 40V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

MOSFET, N-CH, 40V, 195A, TO-220AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 195A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0015; Available until stocks are exhausted Alternative available

Farnell

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon