Infineon IRLB3034PBF

Name: Infineon IRLB3034PBF
Brand: Infineon
SKU: IRLB3034PBF

Single N-Channel 40 V 1.7 mOhm 108 nC HEXFET® Power Mosfet - TO-220-3

$ 1.263

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

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Distributor		SKU		Min	Pkg
Arrow Electronics		IRLB3034PBF	1,475	1		0.996	0.996	0.996	0.996	0.996
Rochester Electronics	2	IRLB3034PBF	25,516					1.710	1.530	1.440	1h
RS (Formerly Allied Electronics)		IRLB3034PBF	0	1	Bulk	5.530	4.870	4.870	4.870	4.870	17h
Farnell		IRLB3034PBF	0	1		3.731*	3.404*	2.111*	1.906*	1.906*	11h
Microchip USA		IRLB3034PBF	325	150	Tube				24.700	24.700	18h

数据表和文档

下载 Infineon IRLB3034PBF 的数据表和制造商文档。

Farnell

Datasheet9 页17 年前

IHS

库存历史记录

3 个月趋势:

+0.55%

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2009-01-14

Lifecycle StatusObsolete (Last Updated: 4 months ago)

描述

由其分销商提供的 Infineon IRLB3034PBF 的描述。

Single N-Channel 40 V 1.7 mOhm 108 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

Res Thick Film 2512 1K Ohm 5% 1W ±200ppm/C Molded SMD Automotive Punched Plastic T/R

Utmel Electronic

Trans MOSFET N-CH 40V 343A 3-Pin(3+Tab) TO-220AB

Avnet

MOSFET, 40V, 343A, 1.7 MOHM, 108 NC QG,TO220

RS (Formerly Allied Electronics)

Power Field-Effect Transistor, 195A I(D), 40V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon

MOSFET, N-CH 40V 195A TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:195A; Drain Source Voltage Vds:40V; On Resistance Rds(on):1.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:375W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:195A; Package / Case:TO-220AB; Power Dissipation Pd:375W; Power Dissipation Pd:375W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:40V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V

element14 APAC