Infineon IRL40B209

Name: Infineon IRL40B209
Brand: Infineon
SKU: IRL40B209

Single N-Channel 40 V 1.25 mOhm 180 nC HEXFET® Power Mosfet - TO-220-3

$ 0.906

Obsolete

数据表

制造商页面

价格与库存

授权分销商

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分销商

SKU

最小

Pkg

批量定价

Newark

IRL40B209

USD

0.552

Rochester Electronics

USD

23h

213

USD

25m

USD

数据表和文档

下载 Infineon IRL40B209 的数据表和制造商文档。

IHS

Datasheet11 页11 年前

element14 APAC

库存历史记录

3 个月趋势:

+0.00%

CAD 模型

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2015-05-20

Lifecycle StatusObsolete (Last Updated: 5 months ago)

LTB Date2022-09-30

LTD Date2023-03-31

描述

由其分销商提供的 Infineon IRL40B209 的描述。

Single N-Channel 40 V 1.25 mOhm 180 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

40V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package, TO220-3, RoHS

Infineon SCT

MOSFET, 40V, 195A, 1.25 MOHM, 180 NC QG, LOGIC LEVEL, TO220

Avnet

Trans MOSFET N-CH Si 40V 414A 3-Pin(3+Tab) TO-220AB Tube

Verical

Power Field-Effect Transistor, 195A I(D), 40V, 0.00125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

MOSFET, N-CH, 40V, 195A, TO-220AB-3; Transistor Polarity:N Channel; Continuous Drain Current Id:195A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.001ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.4V

element14 APAC

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon