Infineon IRL3705NPBF

Name: Infineon IRL3705NPBF
Brand: Infineon
SKU: IRL3705NPBF

Mosfet, Power; N-ch; Vdss 55V; Rds(on) 0.01 Ohm; Id 89A; TO-220AB; Pd 170W; Vgs +/-16V

$ 0.917

Production

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor		SKU		Min	Pkg
Newark		IRL3705NPBF	599	1		2.620	1.690	1.160	0.895	0.895
Future Electronics	2	IRL3705NPBF	100	50	Tube			1.280	1.240	1.210
Arrow Electronics	3	IRL3705NPBF	483	1		2.456	1.606	1.124	1.124	1.124
DigiKey		IRL3705NPBF-ND	3,227	1	Tube	2.800	1.806	1.239	0.918	0.760
RS (Formerly Allied Electronics)		IRL3705NPBF	0	1	Bulk	2.540	2.240	2.240	2.240	2.240	2h

数据表和文档

下载 Infineon IRL3705NPBF 的数据表和制造商文档。

IHS

Datasheet9 页7 年前

Datasheet9 页28 年前

Datasheet9 页22 年前

Newark

RS (Formerly Allied Electronics)

Farnell

iiiC

库存历史记录

3 个月趋势:

-27.42%

CAD 模型

从我们值得信赖的合作伙伴处下载 Infineon IRL3705NPBF 符号、封装和 3D STEP 模型。

来源	eCAD	mCAD	文件
Component Search Engine	符号封装	3D	下载
EE Concierge	符号封装
SnapEDA		3D	下载

下载 CAD 模型时，合作伙伴网站将在新标签页中打开

从 Octopart 下载 CAD 模型，即表示您同意我们的条款和条件以及隐私政策。

备用零件

此零件

备用零件

InfineonIRL3705NPBF

InfineonAUIRL3705N

Price @ 1000

$ 0.917

$ 2.415

Stock

468,924

214,570

Authorized Distributors

Mount

Through Hole

Case/Package

TO-220AB

Drain to Source Voltage (Vdss)

55 V

Continuous Drain Current (ID)

89 A

Threshold Voltage

2 V

1 V

Rds On Max

10 mΩ

Gate to Source Voltage (Vgs)

16 V

Power Dissipation

170 W

Input Capacitance

3.6 nF

供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1996-02-01

Lifecycle StatusProduction (Last Updated: 4 months ago)

LTB Date2012-08-25

LTD Date2013-02-25

描述

由其分销商提供的 Infineon IRL3705NPBF 的描述。

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.01Ohm;ID 89A;TO-220AB;PD 170W;VGS +/-16V

RS (Formerly Allied Electronics)

Single N-Channel 55 V 0.012 Ohm 98 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

Infineon Technologies N channel HEXFET power MOSFET, 55 V, 89 A, TO-220, IRL3705NPBF

Burklin Elektronik

55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

HEXFET POWER MOSFET Power Field-Effect Transistor, 89A I(D), 55V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

ComSIT Distribution GmbH

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:89A; On Resistance, Rds(on):10mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes

Newark

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon