Infineon IRGP4750DPBF

Name: Infineon IRGP4750DPBF
Brand: Infineon
SKU: IRGP4750DPBF

Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode | IGBT 650V TO-247

$ 3

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

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Distributor		SKU		Min	Pkg
Rochester Electronics	2	IRGP4750DPBF	31,059					3.350	3.000	2.820	19h
Farnell		IRGP4750DPBF	0	1		3.999*	3.579*	3.457*	3.403*	3.403*	4h
Win Source		WS-IRGP4750DPBF	340	5			12.870	8.581	8.581	8.581	20h
Worldway Electronics		IRGP4750DPBF	14,555	7	Tube		1.017	0.986	0.934	0.934	19h
Esaler Electronic		IRGP4750DPBF	68			4.410	4.366	4.323	4.280	4.238	19h

数据表和文档

下载 Infineon IRGP4750DPBF 的数据表和制造商文档。

IHS

Datasheet12 页11 年前

库存历史记录

3 个月趋势:

+0.00%

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2014-06-23

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2018-06-30

LTD Date2018-12-31

描述

由其分销商提供的 Infineon IRGP4750DPBF 的描述。

Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode | IGBT 650V TO-247

Win Source

Trans IGBT Chip N-CH 650V 70A 273000mW 3-Pin(3+Tab) TO-247AC Tube

Verical

IGBT, SINGLE, 650V, 70A, TO-247AC-3

element14 APAC

IRGP4750 DISCRETE IGBT WITH ANTI-PARALL;

Farnell

TUBE / G6.2, 650V, 50A, CO-PAK-247AC

Newark

273W 1.7V 650V 70A TO-247AC 20.7mm

UnikeyIC

Benefits: Low VCE(ON) and switching losses; 5.5s short circuit SOA; Square RBSOA; Maximum junction temperature 175C; Positive VCE(ON) temperature coefficient; Lead-free, RoHS compliant

Infineon