供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-01-14
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2022-01-15
LTD Date2022-07-15
相关零件
InfineonIRGP4640PBF
Tube Through Hole ROHS3Compliant IGBT Transistor 1.9V @ 15V 24A 65A 250W 40ns/105ns
描述
由其分销商提供的 Infineon IRGP4640DPBF 的描述。
Trans IGBT Chip N-CH 600V 65A 250000mW 3-Pin(3+Tab) TO-247AC Tube
Target Applications: AC-DC; Induction Cooker; Pump; Solar; UPS; Welding
; Transistor Polarity:N Channel; DC Collector Current:65A; Collector Emitter Vol
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Insulated Gate Bipolar Transistor, 65A I(C), 600V V(BR)CES, N-Channel, TO-247AC
600 V, 40 A IGBT in TO-247 package, TO247COPAK-3, RoHS
Infineon SCT
IGBT N-Ch 600V 65A Ultrafast TO247AC
IGBT Transistors 600V UltraFast IGBT 40A 250W 75nC
IGBT, SINGLE, 600V, 65A, TO-247AC
IRGP4640 INSULATED GATE BIPOLAR TRANSIS;
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage1.9 V
Collector Emitter Voltage (VCEO)600 V
Continuous Collector Current65 A
Element ConfigurationSingle
Fall Time41 ns
Max Collector Current65 A
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation250 W
Min Operating Temperature-55 °C
Number of Elements1
Package Quantity400
Power Dissipation250 W
Reverse Recovery Time89 ns
Rise Time31 ns
Schedule B8541290080
Turn-Off Delay Time104 ns
Turn-On Delay Time41 ns
Dimensions
Height24.99 mm
Length15.87 mm
Width5.31 mm