供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-01-14
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2017-10-19
LTD Date2018-04-19
相关零件
LittelfuseIXXH60N65B4H1
Disc Igbt Xpt-Genx4 To-247Ad/ Tube Rohs Compliant: Yes |Ixys Semiconductor IXXH60N65B4H1
LittelfuseIXXH60N65B4
IGBT 650V 116A 455W TO247AD / IGBT PT 650 V 116 A 455 W Through Hole TO-247AD (IXXH)
onsemiFGH75T65UPD-F085
Trans IGBT Chip N-CH 650V 150A 375000mW Automotive 3-Pin(3+Tab) TO-247 Tube
描述
由其分销商提供的 Infineon IRGP4266PBF 的描述。
Tube Through Hole ROHS3Compliant IGBT Transistor 2.1V @ 15V 75A 140A 450W 80ns/200ns
IGBT W/ULTRAFAST SOFT RECOVERY D / IGBT 650 V 140 A 450 W Through Hole TO-247AC
IGBT, SINGLE, 650V, 140A, TO-247AC; DC Collector Current: 140A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 450W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247AC; No. of
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Pins3
Weight38.000013 g
Technical
Collector Emitter Breakdown Voltage650 V
Collector Emitter Saturation Voltage1.7 V
Collector Emitter Voltage (VCEO)650 V
Continuous Collector Current140 A
Element ConfigurationSingle
Fall Time55 ns
Max Collector Current140 A
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation450 W
Min Operating Temperature-40 °C
Power Dissipation455 W
Rise Time105 ns
Turn-Off Delay Time200 ns
Turn-On Delay Time80 ns
Dimensions
Height21.1 mm
Length16.13 mm
Width5.2 mm