供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-07-04
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2017-10-19
LTD Date2018-04-19
相关零件
LittelfuseIXXH60N65B4H1
Disc Igbt Xpt-Genx4 To-247Ad/ Tube Rohs Compliant: Yes |Ixys Semiconductor IXXH60N65B4H1
LittelfuseIXXH80N65B4H1
Transistor, Igbt, 650V, 160A, To-247Ad Rohs Compliant: Yes |Ixys Semiconductor IXXH80N65B4H1
LittelfuseIXXH60N65B4
IGBT 650V 116A 455W TO247AD / IGBT PT 650 V 116 A 455 W Through Hole TO-247AD (IXXH)
描述
由其分销商提供的 Infineon IRGP4790DPBF 的描述。
Trans IGBT Chip N-CH 650V 140A 455000mW 3-Pin(3+Tab) TO-247AC Tube
IGBT, SINGLE, 650V, 140A, TO-247AC-3
IRGP4790 DISCRETE IGBT WITH ANTI-PARALL;
G6.2, 650V, 90A, CO-PAK-247AC, TUBE
Insulated Gate Bipolar Transistor
Benefits: Low VCE(ON) and Switching Losses; 5.5s Short Circuit SOA; Square RBSOA; Maximum Junction Temperature 175C; Positive VCE(ON) Temperature Coefficient; Lead-Free, RoHs compliant
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Collector Emitter Breakdown Voltage650 V
Collector Emitter Saturation Voltage2 V
Collector Emitter Voltage (VCEO)650 V
Continuous Collector Current140 A
Element ConfigurationSingle
Fall Time80 ns
Max Collector Current140 A
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation455 W
Min Operating Temperature-40 °C
Number of Elements1
Power Dissipation455 W
Reverse Recovery Time170 ns
Rise Time90 ns
Turn-Off Delay Time200 ns
Turn-On Delay Time50 ns
Dimensions
Height24.99 mm
Length15.87 mm
Width5.31 mm