供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-10-02
Lifecycle StatusObsolete (Last Updated: 9 months ago)
LTB Date2017-10-19
LTD Date2018-04-19
相关零件
InfineonIRGP4069DPBF
600V Low VCEon Trench IGBT with Ultra-Fast Soft Recovery Diode in a TO-247 package
InfineonIRGP4069-EPBF
Insulated Gate Bipolar Transistor, 76A I(C), 600V V(BR)CES, N-Channel, TO-247AD
描述
由其分销商提供的 Infineon IRGP4069PBF 的描述。
Trans IGBT Chip N-CH 600V 76A 3-Pin(3+Tab) TO-247AC
INSULATED GATE BIPOLAR TRANSISTOR Insulated Gate Bipolar Transistor, 76A I(C), 600V V(BR)CES, N-Channel, TO-247AC
600V Low VCEon Trench IGBT in a TO-247 package
TUBE / 600V 76.000A TO-247 ;ROHS COMPLIANT: YES
MOSFET; 600V; 76.000A; TO-247 | Infineon IRGP4069PBF
IGBT,N CH,600V,76A,TO-247AC; Transistor Type:IGBT; DC Collector Current:76A; Collector Emitter Voltage Vces:1.6V; Power Dissipation Pd:368W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:268W
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage1.6 V
Collector Emitter Voltage (VCEO)600 V
Element ConfigurationSingle
Fall Time54 ns
Max Collector Current76 A
Max Operating Temperature175 °C
Max Power Dissipation268 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation268 W
Rise Time42 ns
Turn-Off Delay Time127 ns
Turn-On Delay Time43 ns
Dimensions
Height20.7 mm
Length15.87 mm
Width5.3086 mm