Infineon IRGB6B60KDPBF

Name: Infineon IRGB6B60KDPBF
Brand: Infineon
SKU: IRGB6B60KDPBF

600V UltraFast 10-30 kHz Copack IGBT in a TO-220AB package, TO220COPAK-3, RoHS

$ 5.28

Obsolete

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价格与库存

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未经授权的库存分销商

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Distributor		SKU		Min	Pkg
RS (Formerly Allied Electronics)		IRGB6B60KDPBF	0	400	Bulk				5.280	4.650	8h
Farnell		IRGB6B60KDPBF	0	1		3.928*	3.928*	2.004*	1.574*	1.574*	4h
Win Source	2	WS-IRGB6B60KDPBF	15,000	50				1.189	0.793	0.793	19h
Worldway Electronics	2	IRGB6B60KDPBF	18,011	7	Tube		0.739	0.725	0.697	0.683	2d
IC Components Ltd.		IRGB6B60KDPBF	17,011			3.890	3.890	3.890	1.428	1.428	2d

数据表和文档

下载 Infineon IRGB6B60KDPBF 的数据表和制造商文档。

IHS

Datasheet15 页13 年前

Future Electronics

Newark

Farnell

TME

CAD 模型

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来源	eCAD	mCAD	文件
EE Concierge	符号封装

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2002-05-21

Lifecycle StatusObsolete (Last Updated: 5 months ago)

描述

由其分销商提供的 Infineon IRGB6B60KDPBF 的描述。

600V UltraFast 10-30 kHz Copack IGBT in a TO-220AB package, TO220COPAK-3, RoHS

Infineon SCT

N-Channel 600 V 18 A Flange Mount Insulated Gated Bipolar Transistor - TO-220AB

Future Electronics

Trans IGBT Chip N-CH 600V 13A 3-Pin(3+Tab) TO-220AB

Avnet

Target Applications: Dishwasher; Dryer; Fan; Lighting HID; Pump; Refridgeration; Solar

Infineon

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220AB

ComSIT Distribution GmbH

IGBT, 600V, 13A, TO-220; Transistor Type:IGBT; DC Collector Current:13A; Collector Emitter Voltage Vces:2V; Power Dissipation Pd:90W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:13A; Fall Time Max:22ns; Fall Time tf:22ns; Package / Case:TO-220AB; Power Dissipation Max:90W; Power Dissipation Pd:90W; Power Dissipation Pd:90W; Pulsed Current Icm:26A; Rise Time:17ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

element14 APAC