Infineon IRG4BC20KDPBF

Name: Infineon IRG4BC20KDPBF
Brand: Infineon
SKU: IRG4BC20KDPBF

IRG4BC20KDPBF Series 600 V 9 A N-Channel UltraFast IGBT - TO-220AB

$ 4.52

Obsolete

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
RS (Formerly Allied Electronics)		IRG4BC20KDPBF	0	1	Bulk	5.030	4.520	4.520	4.520	4.520	9h
Farnell		IRG4BC20KDPBF	0	1		2.277*	1.881*	1.622*	1.331*	1.331*	15h
Microchip USA		IRG4BC20KD	334	600	Tray				1.440	1.440	10h
Win Source	2	WS-IRG4BC20KD	8,605	35				1.432	1.163	1.163	17h
Worldway Electronics	2	IRG4BC20KD	14,481	7	Tube		0.536	0.520	0.492	0.492	16h

数据表和文档

下载 Infineon IRG4BC20KDPBF 的数据表和制造商文档。

IHS

Datasheet11 页22 年前

Newark

RS (Formerly Allied Electronics)

iiiC

DigiKey

CAD 模型

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2004-01-08

Lifecycle StatusObsolete (Last Updated: 4 months ago)

描述

由其分销商提供的 Infineon IRG4BC20KDPBF 的描述。

IRG4BC20KDPBF Series 600 V 9 A N-Channel UltraFast IGBT - TO-220AB

Future Electronics

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A) | IGBT 600V 16A 60W TO220AB

Win Source

Trans IGBT Chip N-CH 600V 16A 3-Pin(3+Tab) TO-220AB

Avnet

600V UltraFast 8-25 kHz Copack IGBT in a TO-220AB package

International Rectifier

Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, TO-220AB

IHS

IGBT Housing type: TO-220AB Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2.8 V Current release time: 160 ns Power dissipation: 60 W

Distrelec

IGBT, N, 600V, 16A, TO-220AB; Transistor Type:IGBT; DC Collector Current:16A; Collector Emitter Voltage Vces:2.8V; Power Dissipation Pd:60W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:16A; Package / Case:TO-220AB; Power Dissipation Max:60W; Power Dissipation Pd:60W; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

element14 APAC