Infineon IRG4RC10KDTRPBF

Name: Infineon IRG4RC10KDTRPBF
Brand: Infineon
SKU: IRG4RC10KDTRPBF

IRG4RC10K Series 600 V 9 A Surface Mount UltraFast Speed IGBT - TO-252AA

$ 0.988

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

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Distributor	SKU		Min	Pkg
Rochester Electronics	IRG4RC10KDTRPBF	3,561					1.190	0.988	0.881	21h
RS (Formerly Allied Electronics)	IRG4RC10KDTRPBF	0	2K	Bulk					6.510	14h
Farnell	IRG4RC10KDTRPBF	0	1		1.287*	1.287*	1.111*	1.056*	1.056*	20h
Win Source	WS-IRG4RC10KDTRPBF	5,334	75				0.682	0.455	0.455	22h
Worldway Electronics	IRG4RC10KDTRPBF	17,183	7	Tape & Reel		0.318	0.309	0.292	0.292	2h

数据表和文档

下载 Infineon IRG4RC10KDTRPBF 的数据表和制造商文档。

IHS

Datasheet12 页22 年前

Newark

iiiC

库存历史记录

3 个月趋势:

+0.00%

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InfineonIRG4RC10KDTRPBF

InfineonIRG4RC10KDPBF

Price @ 1000

$ 0.988

$ 3.09

Stock

61,487

205,725

Authorized Distributors

Mount

Surface Mount

Case/Package

DPAK

Collector Emitter Breakdown Voltage

600 V

Max Collector Current

9 A

Power Dissipation

38 W

Collector Emitter Saturation Voltage

2.39 V

2.62 V

Reverse Recovery Time

28 ns

供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1998-06-01

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2020-06-30

LTD Date2020-12-31

描述

由其分销商提供的 Infineon IRG4RC10KDTRPBF 的描述。

IRG4RC10K Series 600 V 9 A Surface Mount UltraFast Speed IGBT - TO-252AA

Future Electronics

Trans IGBT Chip N-CH 600V 9A 38000mW 3-Pin(2+Tab) DPAK T/R

Verical

Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-252AA

IHS

IGBT, N-CHANNEL, 600V, 8.5A, D-PAK TO-252AA

RS (Formerly Allied Electronics)

SHORT CIRCUIT RATED ULTRAFAST IG

ODG (Origin Data Global)

IGBT, COPAK, D-PAK; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:9A; Voltage, Vce Sat Max:2.39V; Power Dissipation:38W; Case Style:D-PAK; Termination Type:SMD; Alternate Case Style:TO-252; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:18A; Power, Pd:38W; Time, Rise:24ns

Farnell