Infineon IRG4PH50KDPBF

Name: Infineon IRG4PH50KDPBF
Brand: Infineon
SKU: IRG4PH50KDPBF

IRG4PH50KDPBF Series 1200 V 24 A N-Channel UltraFast IGBT - TO-247AC

$ 17.2

Obsolete

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
RS (Formerly Allied Electronics)		IRG4PH50KDPBF	0	1	Bulk	19.550	17.200	17.200	17.200	17.200	20h
Farnell		IRG4PH50KDPBF	0	1		10.007*	6.844*	6.844*	6.844*	6.844*	3h
Win Source	2	WS-IRG4PH50KD	98	20				2.335	1.959	1.959	4h
Worldway Electronics	2	IRG4PH50KD	16,832	7			0.678	0.657	0.623	0.623	1d
IC Components Ltd.	2	IRG4PH50KD	4,600			4.040	4.040	4.040	4.040	4.040	1d

数据表和文档

下载 Infineon IRG4PH50KDPBF 的数据表和制造商文档。

IHS

Datasheet11 页22 年前

Datasheet11 页25 年前

Newark

RS (Formerly Allied Electronics)

DigiKey

CAD 模型

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来源	eCAD	mCAD	文件
EE Concierge	符号封装
SnapEDA	封装		下载

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1997-10-06

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2020-06-30

LTD Date2020-12-31

描述

由其分销商提供的 Infineon IRG4PH50KDPBF 的描述。

IRG4PH50KDPBF Series 1200 V 24 A N-Channel UltraFast IGBT - TO-247AC

Future Electronics

IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 1200 V Collector-emitter saturation voltage: 3.5 V Current release time: 390 ns Power dissipation: 200 W

Distrelec

IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:45A; Collector Emitter Saturation Voltage, Vce(sat):3.5V; Power Dissipation, Pd:200W; Package/Case:TO-247AC ;RoHS Compliant: Yes

Newark

IGBT, 1200V, 45A, TO-247AC; Transistor Type:IGBT; DC Collector Current:45A; Collector Emitter Voltage Vces:2.77V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:45A; Current Temperature:25°C; Device Marking:IRG4PH50KDPBF; Fall Time Max:300ns; Fall Time tf:300ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:90A; Rise Time:100ns; Short Circuit Withstand Time Min:10µs; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV

element14 APAC