Infineon IRG4PF50WDPBF

Name: Infineon IRG4PF50WDPBF
Brand: Infineon
SKU: IRG4PF50WDPBF

IRG4PF50WDPBF Series 900 V 28 A N-Channel UltraFast IGBT - TO-247AC

$ 16.53

Obsolete

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
RS (Formerly Allied Electronics)		IRG4PF50WDPBF	0	1	Bulk	18.790	16.530	16.530	16.530	16.530	2h
Farnell	2	IRG4PF50WDPBF	0	1		9.885*	7.841*	6.509*	6.509*	6.509*	10h
Win Source	2	WS-IRG4PF50WD	5,000	3			15.154	13.034	13.034	13.034	11h
Worldway Electronics	2	IRG4PF50WD	12,283	7			4.391	4.257	4.033	4.033	9h
IC Components Ltd.	2	IRG4PF50WD	4,594			11.390	11.390	11.390	11.390	11.390	2d

数据表和文档

下载 Infineon IRG4PF50WDPBF 的数据表和制造商文档。

IHS

Datasheet11 页22 年前

Newark

RS (Formerly Allied Electronics)

iiiC

DigiKey

CAD 模型

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来源	eCAD	mCAD	文件
EE Concierge	符号封装
SnapEDA	封装		下载

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2001-04-03

Lifecycle StatusObsolete (Last Updated: 4 months ago)

描述

由其分销商提供的 Infineon IRG4PF50WDPBF 的描述。

IRG4PF50WDPBF Series 900 V 28 A N-Channel UltraFast IGBT - TO-247AC

Future Electronics

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Insulated Gate Bipolar Transistor, 51A I(C), 900V V(BR)CES, N-Channel, TO-247AC

ComSIT Distribution GmbH

Copacked 900V IGBT in a TO-247AC package with ultrafast 20-100 kHz ultrafast, ultrasoft recovery anti-parallel diode, TO247COPAK-3, RoHS

Infineon SCT

IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 900 V Collector-emitter saturation voltage: 2.7 V Current release time: 190 ns Power dissipation: 200 W

Distrelec

IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:51A; Collector Emitter Saturation Voltage, Vce(sat):2.7V; Power Dissipation, Pd:200W; Package/Case:TO-247AC ;RoHS Compliant: Yes

Newark

IGBT, TO-247; Collector Emitter Saturation Voltage Vce(on): 2.25V; Power Dissipation Pd: 200W; Collector Emitter Voltage V(br)ceo: 900V; Transistor Case Style: TO-247; No. of Pins: 3Pins; MSL: -; SVHC: No SVHC (27-Jun-2018); Cu

Farnell

IGBT, 900V, 51A, TO-247AC; Transistor Type:IGBT; DC Collector Current:51A; Collector Emitter Voltage Vces:2.25V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:900V; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:51A; Current Temperature:25°C; Device Marking:IRG4PF50WDPbF; Fall Time Max:190ns; Fall Time tf:220ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:204A; Rise Time:52ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:900V

element14 APAC