Infineon IRG4BC30FDPBF

Name: Infineon IRG4BC30FDPBF
Brand: Infineon
SKU: IRG4BC30FDPBF

IRG4BC30FD Series 600 V 17 A N-Channel Fast CoPack IGBT - TO-220AB

$ 6.31

Obsolete

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
RS (Formerly Allied Electronics)		IRG4BC30FDPBF	0	1	Bulk	7.010	6.310	6.310	6.310	6.310	14h
Farnell		IRG4BC30FDPBF	0	1		4.565*	3.437*	3.437*	3.437*	3.437*	8h
Win Source		WS-IRG4BC30FDPBF	5,100	19				2.098	1.818	1.818	23h
Worldway Electronics	2	IRG4BC30FDPBF	18,034	7	Tube		2.059	1.996	1.891	1.891	22h
IC Components Ltd.		IRG4BC30FDPBF	87,066			6.390	6.390	6.390	6.390	6.390	5h

数据表和文档

下载 Infineon IRG4BC30FDPBF 的数据表和制造商文档。

IHS

Datasheet10 页16 年前

Factory Futures

Newark

DigiKey

CAD 模型

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来源	eCAD	mCAD	文件
EE Concierge	符号封装

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1997-04-17

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2012-08-11

LTD Date2013-02-11

描述

由其分销商提供的 Infineon IRG4BC30FDPBF 的描述。

IRG4BC30FD Series 600 V 17 A N-Channel Fast CoPack IGBT - TO-220AB

Future Electronics

Trans IGBT Chip N-CH 600V 31A 3-Pin(3+Tab) TO-220AB

Avnet

Copacked 600V IGBT in a TO-220AB package with a fast 1-8 kHz soft recovery diode, TO220COPAK-3, RoHS

Infineon SCT

IGBT Housing type: TO-220AB Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.59 V Current release time: 160 ns Power dissipation: 100 W

Distrelec

FAST COPACK INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-220AB

ComSIT Distribution GmbH

IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:31A; Collector Emitter Saturation Voltage, Vce(sat):1.8V; Power Dissipation, Pd:100W; Package/Case:TO-220AB ;RoHS Compliant: Yes

Newark

IGBT, 600V, 31A, TO-220; Transistor Type:IGBT; DC Collector Current:31A; Collector Emitter Voltage Vces:1.9V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:31A; Current Temperature:25°C; Device Marking:IRG4BC30FDPBF; Fall Time Max:160ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:100W; Power Dissipation Pd:100W; Power Dissipation Pd:100W; Pulsed Current Icm:120A; Rise Time:26ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

element14 APAC