Infineon IRG4BC30UDPBF

Name: Infineon IRG4BC30UDPBF
Brand: Infineon
SKU: IRG4BC30UDPBF

Trans IGBT Chip N-CH 600V 23A 100000mW 3-Pin(3+Tab) TO-220AB Tube, TO220COPAK-3, RoHS

$ 6.49

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

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Distributor		SKU		Min	Pkg
RS (Formerly Allied Electronics)		IRG4BC30UDPBF	0	1	Bulk	7.210	6.490	6.490	6.490	6.490	22h
Farnell		IRG4BC30UDPBF	0	1		3.899*	3.899*	3.899*	3.899*	3.899*	5h
Win Source	2	WS-IRG4BC30UDPBF	2,691	1		57.778	38.519	38.519	38.519	38.519	6h
Worldway Electronics	2	IRG4BC30UDPBF	13,228	7	Tube		1.994	1.933	1.831	1.831	1d
IC Components Ltd.	2	IRG4BC30UD	4,490			7.060	7.060	7.060	7.060	7.060	1d

数据表和文档

下载 Infineon IRG4BC30UDPBF 的数据表和制造商文档。

IHS

Datasheet10 页16 年前

Newark

RS (Formerly Allied Electronics)

iiiC

DigiKey

CAD 模型

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来源	eCAD	mCAD	文件
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EE Concierge	符号封装

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1997-04-17

Lifecycle StatusObsolete (Last Updated: 4 months ago)

描述

由其分销商提供的 Infineon IRG4BC30UDPBF 的描述。

Trans IGBT Chip N-CH 600V 23A 100000mW 3-Pin(3+Tab) TO-220AB Tube, TO220COPAK-3, RoHS

Infineon SCT

N-Channel 600 V 23 A Flange Mount Ultrafast CoPack IGBT - TO-220AB

Future Electronics

600V UltraFast 8-60 kHz Copack IGBT in a TO-220AB package

International Rectifier

Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-220AB

IHS

IGBT Housing type: TO-220AB Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2.1 V Current release time: 180 ns Power dissipation: 100 W

Distrelec

IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:23A; Collector Emitter Saturation Voltage, Vce(sat):2.1V; Power Dissipation, Pd:100W; Package/Case:TO-220AB ;RoHS Compliant: Yes

Newark

IGBT, 600V, 23A, TO-220; Transistor Type:IGBT; DC Collector Current:23A; Collector Emitter Voltage Vces:2.5V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:23A; Current Temperature:25°C; Device Marking:IRG4BC30UDPbF; Fall Time Max:80ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:100W; Power Dissipation Pd:100W; Power Dissipation Pd:100W; Pulsed Current Icm:92A; Rise Time:21ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

element14 APAC