Infineon IRG4BC20SDPBF

Name: Infineon IRG4BC20SDPBF
Brand: Infineon
SKU: IRG4BC20SDPBF

Trans IGBT Chip N-CH 600V 19A 3-Pin(3+Tab) TO-220AB

$ 2.225

Obsolete

制造商页面数据表

价格与库存

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未经授权的库存分销商

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Distributor	SKU		Min	Pkg
Rochester Electronics	IRG4BC20SDPBF	13					2.120	1.900	1.780	7h
RS (Formerly Allied Electronics)	IRG4BC20SDPBF	0	200	Bulk				2.550	2.550	1d
Microchip USA	IRG4BC20SD	210	600	Tray				1.661	1.661	1d
Component Stockers USA	IRG4BC20SDPBF	17			2.430	2.430	2.430	2.430	2.430	3d
Win Source	WS-IRG4BC20SDPBF	4,240	50				1.276	0.851	0.851	8h

数据表和文档

下载 Infineon IRG4BC20SDPBF 的数据表和制造商文档。

IHS

Datasheet10 页16 年前

Newark

DigiKey

库存历史记录

3 个月趋势:

+0.00%

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1998-12-10

Lifecycle StatusObsolete (Last Updated: 4 months ago)

描述

由其分销商提供的 Infineon IRG4BC20SDPBF 的描述。

Trans IGBT Chip N-CH 600V 19A 3-Pin(3+Tab) TO-220AB

Verical

600V DC-1 kHz (Standard) Copack IGBT in a TO-220AB package

International Rectifier

Insulated Gate Bipolar Transistor, 19A I(C), 600V V(BR)CES, N-Channel, TO-220AB

IHS

IGBT, 600V, 19A, TO-220; Transistor Type:IGBT; DC Collector Current:19A; Collector Emitter Voltage Vces:1.6V; Power Dissipation Pd:60W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:19A; Fall Time Max:35ns; Package / Case:TO-220AB; Power Dissipation Max:60W; Power Dissipation Pd:60W; Power Dissipation Pd:60W; Pulsed Current Icm:38A; Rise Time:35ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

element14 APAC