Infineon IRFSL7762PBF

Name: Infineon IRFSL7762PBF
Brand: Infineon
SKU: IRFSL7762PBF

IRFSL7762PBF N-channel MOSFET Transistor, 85 A, 75 V, 3-Pin TO-262

$ 1.228

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

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Distributor	SKU		Min	Pkg
Rochester Electronics	IRFSL7762PBF	289					1.340	1.110	0.992	12h
DigiKey	IRFSL7762PBF-ND	54	1	Tube	2.520	2.520	1.228	1.228	1.228
RS (Formerly Allied Electronics)	IRFSL7762PBF	0	50	Bulk			1.560	1.560	1.560	4h
Farnell	IRFSL7762PBF	0	1		1.700*	1.208*	1.125*	0.786*	0.760*	11h
Microchip USA	IRFSL7762PBF	1,516	600	Tube				1.056	1.056	2d

数据表和文档

下载 Infineon IRFSL7762PBF 的数据表和制造商文档。

IHS

Datasheet13 页11 年前

Datasheet12 页11 年前

Future Electronics

库存历史记录

3 个月趋势:

+0.00%

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Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2014-08-20

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2017-10-12

LTD Date2018-04-12

描述

由其分销商提供的 Infineon IRFSL7762PBF 的描述。

IRFSL7762PBF N-channel MOSFET Transistor, 85 A, 75 V, 3-Pin TO-262

RS (Formerly Allied Electronics)

75V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 85A I(D), 75V, 0.0067ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA

IHS

MOSFET, N-CH, 75V, 85A, TO-262-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 85A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0056ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7V; P

Farnell

Benefits: Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability; Lead-Free, RoHS Compliant; StrongIRFET

Infineon