供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-08-18
Lifecycle StatusProduction (Last Updated: 6 months ago)
相关零件
InfineonIRFSL3206PBF
MOSFET N-CH 60V 120A TO262 N-Channel 60 V 120A (Tc) 300W (Tc) Through Hole TO-262
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Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a TO-262 Package, TO262-3, RoHS
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描述
由其分销商提供的 Infineon IRFSL3207ZPBF 的描述。
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 3.3Milliohms;ID 170A;TO-262;PD 300W;VF 1.3V
Single N-Channel 75 V 4.1 mOhm 120 nC HEXFET® Power Mosfet - TO-262-3
MOSFET N-CH 75V 120A TO262 N-Channel 75 V 120A (Tc) 300W (Tc) Through Hole TO-262
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
Infineon SCT
300W(Tc) 20V 4V@ 150µA 170nC@ 10 V 1individualNChannel 75V 4.1mΩ@ 75A,10V 120A 6.92nF@50V TO-262 Through hole mounting 10.2mm*4.5mm*9.45mm
MOSFET, N-CH, 75V, 170A, TO-262-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 170A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0033ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; P
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageTO-262
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)120 A
Current Rating170 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance4.1 mΩ
Drain to Source Voltage (Vdss)75 V
Fall Time68 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance6.92 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation300 W
Min Breakdown Voltage75 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance4.1 mΩ
Package Quantity1000
Power Dissipation300 W
Rds On Max4.1 mΩ
Resistance4.1 MΩ
Rise Time68 ns
Threshold Voltage4 V
Turn-Off Delay Time55 ns
Turn-On Delay Time20 ns
Voltage Rating (DC)75 V
Dimensions
Height15.1 mm
Length10.668 mm
Width4.826 mm