Infineon IRFS7734TRL7PP

Name: Infineon IRFS7734TRL7PP
Brand: Infineon
SKU: IRFS7734TRL7PP

75V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7-Lead package, D2PAK7P, RoHS

$ 2.625

Obsolete

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Distributor		SKU		Min	Pkg
Rochester Electronics		IRFS7734TRL7PP	1,024					1.340	1.200	1.130	22h
RS (Formerly Allied Electronics)		IRFS7734TRL7PP	0	800	Bulk				4.050	4.050	14h
Farnell	2	IRFS7734TRL7PP	287	1	Cut Tape	4.239*	2.921*	2.092*	2.092*	2.092*	8h
Verical		IRFS7734TRL7PP	889	224					1.500	1.413
Weyland Electronics Group Pte. Ltd.		IRFS7734TRL7PP	2,400	1	Tape & Reel	2.254	2.254	2.254	2.254	2.254	1d

数据表和文档

下载 Infineon IRFS7734TRL7PP 的数据表和制造商文档。

Farnell

Datasheet12 页11 年前

IHS

Future Electronics

库存历史记录

3 个月趋势:

-0.41%

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InfineonIRFS7734TRL7PP

InfineonIRFS7734-7PPBF

Price @ 1000

$ 2.625

$ 5.58

Stock

55,404

29,107

Authorized Distributors

Mount

Surface Mount

Case/Package

TO-263-7

Drain to Source Voltage (Vdss)

75 V

Continuous Drain Current (ID)

197 A

Threshold Voltage

Rds On Max

3.05 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

294 W

Input Capacitance

10.13 nF

供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2014-08-06

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2022-09-30

LTD Date2023-03-31

描述

由其分销商提供的 Infineon IRFS7734TRL7PP 的描述。

75V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7-Lead package, D2PAK7P, RoHS

Infineon SCT

Single N-Channel 75V 3.05 mOhm 180 nC HEXFET® Power Mosfet - D2PAK-7

Future Electronics

MOSFET, 75V, 183A, 3.46 mOhm, 196 nC, D2PAK, TAPE & REEL LEFT

Newark

Trans MOSFET N-CH 75V 197A 7-Pin(6+Tab) D2PAK T/R

Verical

Power Field-Effect Transistor, 197A I(D), 75V, 0.00305ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB

IHS

MOSFET, N-CH, 75V, 197A, TO-263CB-7; Transistor Polarity: N Channel; Continuous Drain Current Id: 197A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0030; Available until stocks are exhausted Alternative available

Farnell

Benefits: Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability; Lead-Free, RoHS Compliant; StrongIRFET

Infineon

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 197 / Drain-Source Voltage (Vds) V = 75 / ON Resistance (Rds(on)) mOhm = 2.6 / Gate-Source Voltage V = 20 / Fall Time ns = 75 / Rise Time ns = 85 / Turn-OFF Delay Time ns = 123 / Turn-ON Delay Time ns = 17 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = D2PAK / Pins = 7 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 294

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