Infineon IRFS7440PBF

Name: Infineon IRFS7440PBF
Brand: Infineon
SKU: IRFS7440PBF

40V Single N-Channel HEXFET Power MOSFET in a Lead Free D2-Pak package, D2PAK-3, RoHS

$ 2.36

Obsolete

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRFS7440PBF	0	450	Bulk				2.360	2.360	22h
Farnell	IRFS7440PBF	0	1		1.121*	1.121*	0.797*	0.692*	0.692*	1d
Component Stockers USA	IRFS7440PBF	629			99.990	99.990	99.990	99.990	99.990	20h
Win Source	WS-IRFS7440PBF	203,530	145					0.280	0.269	7h
Worldway Electronics	IRFS7440PBF	18,118	7	Tube		0.092	0.089	0.085	0.085	5h

数据表和文档

下载 Infineon IRFS7440PBF 的数据表和制造商文档。

IHS

Datasheet13 页11 年前

Datasheet12 页11 年前

Future Electronics

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InfineonIRFS7440PBF

InfineonIRFS7440TRLPBF

Price @ 1000

$ 2.36

$ 0.609

Stock

242,767

621,989

Authorized Distributors

Mount

Surface Mount

Case/Package

D2PAK

Drain to Source Voltage (Vdss)

40 V

Continuous Drain Current (ID)

120 A

Threshold Voltage

3 V

Rds On Max

2.5 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

208 W

Input Capacitance

4.73 nF

供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2012-10-10

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2016-11-16

LTD Date2017-05-16

描述

由其分销商提供的 Infineon IRFS7440PBF 的描述。

40V Single N-Channel HEXFET Power MOSFET in a Lead Free D2-Pak package, D2PAK-3, RoHS

Infineon SCT

Trans MOSFET N-CH 40V 208A 3-Pin(2+Tab) D2PAK Tube

Avnet

Transistor MOSFET N-ch 40V 120A D2PAK

Fly-Wing Technology

Power Field-Effect Transistor, 120A I(D), 40V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

IHS

MOSFET, N-CH, 40V, 120A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.002ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:208W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +175°C

Farnell

Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: Battery Operated Drive; Consumer Full-Bridge; Full-Bridge; Push-Pull

Infineon