供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-11-15
Lifecycle StatusObsolete (Last Updated: 8 months ago)
相关零件
InfineonIRFS4310TRLPBF
MOSFET N-CH 100V 130A D2PAK N-Channel 100 V 130A (Tc) 300W (Tc) Surface Mount D2PAK
InfineonIRFS4310ZPBF
MOSFET N-CH 100V 120A D2PAK N-Channel 100 V 120A (Tc) 250W (Tc) Surface Mount D2PAK
InfineonIRFS4310TRRPBF
MOSFET N-CH 100V 130A D2PAK N-Channel 100 V 130A (Tc) 300W (Tc) Surface Mount D2PAK
STMicroelectronicsSTB120NF10T4
N-channel 100 V, 0.009 Ohm, 110 A, STripFET(TM) II Power MOSFET in D2PAK package
STMicroelectronicsSTB140NF75T4
STMicroelectronics N-Channel MOSFET STripFET F3, Vds=75V, 120A, D2PAK (TO-263), SMD, 3-Pin
描述
由其分销商提供的 Infineon IRFS4310PBF 的描述。
MOSFET N-CH 100V 130A D2PAK N-Channel 100 V 130A (Tc) 300W (Tc) Surface Mount D2PAK
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 5.6 Milliohms;ID 130A;D2Pak;PD 300W;VF 1.3V
Transistor MOSFET N Channel 100 Volt 140 Amp 3-Pin 2+ Tab D2Pak
100V Single N-Channel IR MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
Trans MOSFET N-CH 100V 130A 3-Pin(2+Tab) D2PAK
Power Field-Effect Transistor, 75A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:140A; Drain Source Voltage Vds:100V; On Resistance Rds(on):5.6mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:300W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:140A; Package / Case:D2-PAK; Power Dissipation Pd:300W; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:140A; On Resistance, Rds(on):7mohm; Package/Case:D2-Pak; Leaded Process Compatible:Yes ;RoHS Compliant: Yes
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageD2PAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)75 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance7 mΩ
Drain to Source Voltage (Vdss)100 V
Dual Supply Voltage100 V
Element ConfigurationSingle
Fall Time78 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance7.67 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation300 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Elements1
On-State Resistance7 mΩ
Package Quantity1000
Power Dissipation330 W
Rds On Max7 mΩ
Recovery Time68 ns
Rise Time110 ns
TerminationSMD/SMT
Threshold Voltage4 V
Turn-Off Delay Time68 ns
Turn-On Delay Time26 ns
Dimensions
Height4.826 mm
Length10.668 mm
Width9.65 mm