数据表和文档
下载 Infineon IRFS4010TRLPBF 的数据表和制造商文档。
官方数据表7 年前
备用零件
Price @ 1000
$ 1.33
$ 5.57
$ 5.57
Stock
817,117
98,764
98,764
Authorized Distributors
6
2
2
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
100 V
100 V
100 V
Continuous Drain Current (ID)
180 A
180 A
180 A
Threshold Voltage
-
-
-
Rds On Max
4.7 mΩ
4.7 mΩ
4.7 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
375 W
375 W
375 W
Input Capacitance
9.575 nF
9.575 nF
9.575 nF
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描述
由其分销商提供的 Infineon IRFS4010TRLPBF 的描述。
Trans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 100V 180A D2PAK
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Single N-Channel 100 V 4.7 mOhm 143 nC HEXFET® Power Mosfet - D2PAK
Power MOSFET, N Channel, 100 V, 180 A, 0.0047 ohm, TO-263AB, Surface Mount
MOSFET, 100V, 180A, 4.7 MOHM, 143 NC QG, D2-PAK | Infineon IRFS4010TRLPBF
Power Field-Effect Transistor, 180A I(D), 100V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:180A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:375W; No. Of Pins:3Pins Rohs Compliant: Yes |Infineon Technologies IRFS4010TRLPBF.
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)180 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance4.7 mΩ
Drain to Source Voltage (Vdss)100 V
Fall Time77 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance9.575 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation375 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance4.7 mΩ
Package Quantity800
Power Dissipation375 W
Rds On Max4.7 mΩ
Rise Time86 ns
Schedule B8541290080
Turn-Off Delay Time100 ns
Turn-On Delay Time21 ns
Dimensions
Height5.084 mm
Length10.668 mm
Width9.65 mm