Infineon IRFS3006TRLPBF

Single N-Channel 60 V 2.5 mOhm 200 nC HEXFET® Power Mosfet - D2PAK

60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

Trans MOSFET N-CH Si 60V 270A 3-Pin(2+Tab) D2PAK T/R

MOSFET, N-CH, 60V, 195A, TO-263AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 195A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.002ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 375W; Transistor Case Style: TO-263AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:195A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:375W; No. Of Pins:3Pins Rohs Compliant: Yes |Infineon Technologies IRFS3006TRLPBF.

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 270 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 2 / Gate-Source Voltage V = 20 / Fall Time ns = 189 / Rise Time ns = 182 / Turn-OFF Delay Time ns = 118 / Turn-ON Delay Time ns = 16 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = D2PAK / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 375