备用零件
Price @ 1000
$ 0.506
$ 1.322
$ 1.322
Stock
598,450
378,579
378,579
Authorized Distributors
6
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
DPAK
DPAK
DPAK
Drain to Source Voltage (Vdss)
100 V
100 V
100 V
Continuous Drain Current (ID)
35 A
35 A
35 A
Threshold Voltage
-
4 V
4 V
Rds On Max
28.5 mΩ
28.5 mΩ
28.5 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
91 W
91 W
91 W
Input Capacitance
1.69 nF
1.69 nF
1.69 nF
供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2005-02-03
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2025-03-31
LTD Date2025-09-30
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描述
由其分销商提供的 Infineon IRFR540ZTRPBF 的描述。
Trans MOSFET N-CH Si 100V 35A Automotive 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 100V 35A DPAK
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
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Power Field-Effect Transistor, 35A I(D), 100V, 0.0285ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: Lighting LED
MOSFET, N-CH, 100V, 35A, TO-252AA; Transistor Polarity: N Channel; Continuous Drain Current Id: 35A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0225oh; Available until stocks are exhausted Alternative available
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)35 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance28.5 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time34 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.69 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation91 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance28.5 mΩ
Package Quantity2000
PackagingTape & Reel
Power Dissipation91 W
Rds On Max28.5 mΩ
Rise Time42 ns
Turn-Off Delay Time43 ns
Turn-On Delay Time14 ns
Dimensions
Height2.52 mm
Length6.7056 mm
Width6.22 mm