Infineon IRFR3504PBF

Name: Infineon IRFR3504PBF
Brand: Infineon
SKU: IRFR3504PBF

40V Single N-Channel HEXFET Power MOSFET in a D-Pak package

$ 1.15

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRFR3504PBF	0	675	Bulk				1.150	1.150	1d
Farnell	IRFR3504PBF	0	1		2.100*	2.100*	0.873*	0.709*	0.709*	6h
Win Source	WS-IRFR3504PBF	20	90				0.587	0.391	0.391	8h
Worldway Electronics	IRFR3504PBF	19,323	7	Tube		0.364	0.353	0.334	0.334	1d
SHENGYU ELECTRONICS	IRFR3504PBF	13,774	1		0.230	0.225	0.220	0.210	0.200	5d

数据表和文档

下载 Infineon IRFR3504PBF 的数据表和制造商文档。

IHS

Datasheet11 页15 年前

element14 APAC

Newark

iiiC

RS (Formerly Allied Electronics)

供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2004-06-01

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2012-01-08

LTD Date2012-07-08

描述

由其分销商提供的 Infineon IRFR3504PBF 的描述。

40V Single N-Channel HEXFET Power MOSFET in a D-Pak package

International Rectifier

MOSFET, 40V, 87A, 9.2 MOHM, 48 NC QG, D-PAK

RS (Formerly Allied Electronics)

Trans MOSFET N-CH 40V 87A 3-Pin (2+Tab) DPAK

Verical

Power Field-Effect Transistor, 30A I(D), 40V, 0.0092ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

IHS

MOSFET, N, 40V, 87A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:87A; Drain Source Voltage Vds:40V; On Resistance Rds(on):9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:140W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:30A; Junction to Case Thermal Resistance A:1.09°C/W; On State resistance @ Vgs = 10V:9.2mohm; Package / Case:DPAK; Power Dissipation Pd:140W; Power Dissipation Pd:140W; Pulse Current Idm:350A; Termination Type:SMD; Voltage Vds Typ:40V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

element14 APAC