Infineon IRFR3410PBF

Name: Infineon IRFR3410PBF
Brand: Infineon
SKU: IRFR3410PBF

MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 34Milliohms; ID 31A; D-Pak (TO-252AA); -55deg

$ 1.33

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRFR3410PBF	0	5	Bulk		1.470	1.330	1.330	1.330	15h
Farnell	IRFR3410PBF	0	5			1.118*	0.773*	0.539*	0.528*	22h
Win Source	WS-IRFR3410PBF	43,640	125					0.321	0.321	1d
Worldway Electronics	IRFR3410PBF	18,351	7	Tube		0.199	0.193	0.183	0.183	22h
Chipsmall Limited	IRFR3410PBF	21,400	1		0.930	0.620	0.372	0.310	0.310	21h

数据表和文档

下载 Infineon IRFR3410PBF 的数据表和制造商文档。

Newark

Datasheet11 页21 年前

Datasheet10 页20 年前

IHS

TME

RS (Formerly Allied Electronics)

Jameco

供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2002-09-23

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2018-12-15

LTD Date2019-06-15

描述

由其分销商提供的 Infineon IRFR3410PBF 的描述。

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 34Milliohms;ID 31A;D-Pak (TO-252AA);-55deg

RS (Formerly Allied Electronics)

Single N-Channel 100 V 39 mOhm 37 nC HEXFET® Power Mosfet - TO-252AA

Future Electronics

IRFR3410PBF,MOSFET, 100V, 31A, 39 MOHM, 37 NC QG, D-PAK<AZ

Jameco

100V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 30A I(D), 100V, 0.039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

IHS

Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

Infineon

MOSFET, N, 100V, 31A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:31A; Drain Source Voltage Vds:100V; On Resistance Rds(on):39mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:110W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:31A; Junction to Case Thermal Resistance A:1.4°C/W; Package / Case:DPAK; Power Dissipation Pd:110W; Power Dissipation Pd:110W; Pulse Current Idm:125A; SMD Marking:IRFR3410; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

element14 APAC