供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1990-01-01
Lifecycle StatusProduction (Last Updated: 4 months ago)
相关零件
InfineonJANTX2N6768
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
STMicroelectronicsSTP17NK40Z
N-CHANNEL 400V - 0.23 Ohm - 15A TO-220 Zener-Protected SuperMESH(TM) Power MOSFET
描述
由其分销商提供的 Infineon IRFM350 的描述。
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
Single N-Channel 400 V 150 W 110 nC Hexfet Power Mosfet Flange Mount - TO-254AA
400V Single N-Channel Hi-Rel MOSFET in a TO-254AA package, TO-254AA-3
Infineon SCT
Trans MOSFET N-CH 400V 14A 3-Pin(3+Tab) TO-254AA
14 A 400 V 0.415 ohm N-CHANNEL Si POWER MOSFET TO-254AA
Power Field-Effect Transistor, 14A I(D), 400V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA
IC FLASH 16MBIT SPI/QUAD 8SOIC
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Body MaterialMetal
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)14 A
Drain to Source Breakdown Voltage400 V
Drain to Source Resistance415 mΩ
Drain to Source Voltage (Vdss)400 V
Gate to Source Voltage (Vgs)20 V
Max Operating Temperature150 °C
Max Power Dissipation150 W
Min Breakdown Voltage400 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance300 mΩ
Power Dissipation150 W
Schedule B8541290080