Infineon IRFI4110GPBF

Name: Infineon IRFI4110GPBF
Brand: Infineon
SKU: IRFI4110GPBF

N CH POWER MOSFET, HEXFET, 100V, 72A, TO-220AB; Transistor Polarity: N Channel; C

$ 1.978

Obsolete

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Arrow Electronics	3	IRFI4110GPBF	1,877	1		1.757	1.757	1.757	1.757	1.757
Rochester Electronics		IRFI4110GPBF	37,504					1.800	1.610	1.510	23h
RS (Formerly Allied Electronics)		IRFI4110GPBF	0	2	Bulk		4.190	3.970	3.970	3.970	16h
Farnell		IRFI4110GPBF	4,076	1		3.376*	2.539*	2.282*	2.120*	2.120*	23h
Mouser		942-IRFI4110GPBF	1,191	1	Tube	3.330	2.510	2.250	2.200	1.860

数据表和文档

下载 Infineon IRFI4110GPBF 的数据表和制造商文档。

Farnell

Datasheet9 页9 年前

Datasheet8 页15 年前

库存历史记录

3 个月趋势:

-1.59%

CAD 模型

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来源	eCAD	mCAD	文件
EE Concierge	符号封装

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2011-01-11

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2024-09-30

LTD Date2025-03-31

描述

由其分销商提供的 Infineon IRFI4110GPBF 的描述。

N CH POWER MOSFET, HEXFET, 100V, 72A, TO-220AB; Transistor Polarity:N Channel; C

Newark

Single N-Channel 100 V 4.5 mOhm 190 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

100V Single N-Channel HEXFET Power MOSFET in a TO-220AB FullPak, FULLPAK220-3, RoHS

Infineon SCT

Trans MOSFET N-CH 100V 72A 3-Pin(3+Tab) TO-220AB Full-Pak

Avnet

Power Field-Effect Transistor, 72A I(D), 100V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

N CH POWER MOSFET, HEXFET, 100V, 72A, TO; N CH POWER MOSFET, HEXFET, 100V, 72A, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:72A; Drain Source Voltage Vds:100V; On Resistance Rds(on):3.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V

element14 APAC

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 72 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 3.7 / Gate-Source Voltage V = 20 / Fall Time ns = 71 / Rise Time ns = 58 / Turn-OFF Delay Time ns = 81 / Turn-ON Delay Time ns = 24 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 61

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