Infineon IRFH8311TRPBF

Name: Infineon IRFH8311TRPBF
Brand: Infineon
SKU: IRFH8311TRPBF

30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS

$ 0.432

Obsolete

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Distributor		SKU		Min	Pkg
Arrow Electronics		IRFH8311TRPBF	4,000	1		0.416	0.416	0.416	0.416	0.416
Rochester Electronics		IRFH8311TRPBF	2,800					0.493	0.409	0.365	11h
DigiKey	3	IRFH8311TRPBFCT-ND	41,664	1	Cut Tape	1.640	1.036	0.690	0.494	0.454
Avnet		IRFH8311TRPBF	0	4K							3d
Farnell	2	IRFH8311TRPBF	565	1	Cut Tape	1.719*	1.080*	0.720*	0.565*	0.565*	10h

数据表和文档

下载 Infineon IRFH8311TRPBF 的数据表和制造商文档。

Newark

Datasheet10 页10 年前

IHS

TME

Arrow Electronics

库存历史记录

3 个月趋势:

-0.22%

CAD 模型

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来源	eCAD	mCAD	文件
EE Concierge	符号封装

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2011-10-31

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2025-09-30

LTD Date2026-03-31

描述

由其分销商提供的 Infineon IRFH8311TRPBF 的描述。

30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS

Infineon SCT

Trans MOSFET N-CH 30V 32A 8-Pin QFN EP T/R / MOSFET N CH 30V 32A PQFN5X6

Win Source

Power Field-Effect Transistor, 169A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

IHS

TAPE AND REEL / MOSFET, 30V, 50A, 2.1 mOhm, 33nC Qg, PQFN5x6

Newark

IRFH Series 30V 32A 3.6W 2.1mOhm SMD Single N-Channel MOSFET PQFN-8

Future Electronics

MOSFET, N-CH, 30V, 80A, PQFN; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0017ohm; Rds(on) Test Voltage Vgs: ; Available until stocks are exhausted

Farnell

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon