供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-03-31
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2014-05-12
LTD Date2014-11-12
相关零件
InfineonIRFHS8342TRPBF
INFINEON IRFHS8342TRPBF MOSFET Transistor, N Channel, 8.8 A, 30 V, 0.013 ohm, 10 V, 1.8 VNew
InfineonIRFHM830TRPBF
Single N-Channel 30 V 6 mOhm 15 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm
描述
由其分销商提供的 Infineon IRFH5250DTR2PBF 的描述。
MOSFET N-CH 25V 40A 8VQFN / Synchronous MOSFET for high frequency buck converters
25V Single N-Channel HEXFET Power MOSFET with integrated Schottky Diode in a 5mm X 6mm PQFN package
Trans MOSFET N-CH 25V 40A 8-Pin PQFN EP T/R
MOSFET, 25V FETky, 100A, 1.4 mOhm, 39 nC Qg, PQFN
MOSFET, N CH, 25V, 100A, PQFN56; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:25V; On Resistance Rds(on):1mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:250W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:100A; Power Dissipation Pd:250W; Voltage Vgs Max:20V
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageVQFN
MountSurface Mount
Number of Pins8
Number of Terminals5
Technical
Continuous Drain Current (ID)40 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance2.2 mΩ
Drain to Source Voltage (Vdss)25 V
Fall Time24 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance706 pF
Max Operating Temperature150 °C
Max Power Dissipation156 W
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Nominal Vgs1.8 V
Number of Elements1
PackagingCut Tape
Rds On Max1.4 mΩ
Recovery Time41 ns
Rise Time72 ns
Threshold Voltage1.8 V
Turn-Off Delay Time23 ns
Turn-On Delay Time23 ns
Dimensions
Height838.2 µm
Length5.9944 mm
Width5 mm