供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-04-24
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2016-12-02
LTD Date2017-09-02
相关零件
InfineonIRFH8325TRPBF
30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PQFN 5X6 8L, RoHS
InfineonIRFH8330TRPBF
30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PQFN 5X6 8L, RoHS
InfineonIRFH3702TRPBF
30V Single N-Channel HEXFET Power MOSFET in a 3mm X 3mm PQFN package, PQFN 3X3 8L, RoHS
描述
由其分销商提供的 Infineon IRFH4226TRPBF 的描述。
25V Single N-Channel HEXFET Power MOSFET in a PQFN 5 x 6 B package, PG-TDSON-8, RoHS
Infineon SCT
Trans MOSFET N-CH 25V 30A 8-Pin QFN EP T/R
3.4W(Ta),46W(Tc) 20V 2.1V@ 50¦ÌA 32nC@ 10V 1N 25V 2.4m¦¸@ 30A,10V 30A 2nF@13V QFN 6mm*5mm*830¦Ìm
Power Field-Effect Transistor, 30A I(D), 25V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Benefits: Low Charge (typical 16 nC); Low RDSon (less than 2.4 mOhms); Low Thermal Resistance to PCB (less than 2.7 C/W); Low Profile (less than 0.9 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; RoHS Compliant, Halogen-Free; MSL1, Industrial Qualification; FastIRFET
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageQFN
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)30 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance3.3 mΩ
Drain to Source Voltage (Vdss)25 V
Fall Time8.1 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation46 W
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance2.4 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation3.4 W
Rds On Max2.4 mΩ
Rise Time35 ns
Turn-Off Delay Time14 ns
Turn-On Delay Time11 ns
Dimensions
Height950 µm